Redundant non-volatile memory cell

Two floating gate devices are arranged in a redundant configuration in a non-volatile memory (NVM) such that stress induced leakage current (SILC) or other failures do not result in a complete loss of memory storage. The redundant NVM may be arranged as a series configuration, a parallel configurati...

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Bibliographische Detailangaben

Hauptverfasser:	GUTNIK VADIM, COLLERAN WILLIAM T, MA YANJUN
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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