Semiconductor integrated circuit device

Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dum...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKEDA TOSHIFUMI, KOUBUCHI YASUSHI, NAGASAWA KOICHI, MONIWA MASAHIRO, YAMADA YOUHEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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