Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution
A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through...
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| creator | HAMMOND, IV EDWARD P PANAGOPOULOS THEODOROS PATERSON ALEXANDER TODOROV VALENTIN N HOLLAND JOHN P HATCHER BRIAN K KATZ DAN |
| description | A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through the gas distribution plate from a gas input to plural gas injection orifices, distributing the gas flow within the gas distribution plate through a succession of arcuate paths joined at respective junctions, dividing gas flow at each junction from a first respective one of said gas flow paths into a respective pair of said gas flow paths in opposite gas flow directions, and restricting the arcuate length of each of the arcuate paths to less than half-circles. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7674394B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7674394B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7674394B23</originalsourceid><addsrcrecordid>eNqNjLEOAUEQQK9RCP5hfkDjLkRLiFKC-jL25u5G1s5mZ9bF30tQKFWvee-Ni3T0qHeEmMSRKrSSgEOTnfGD_BOc5Og5dBBloATWJ8ldDwgdKjSslviajSVA9GgEQ8-eAJtbVntnn_2vOS1GLXql2ZeTAva78_Ywpyg1aURHgay-nFbLVVWuq82i_EN5ARFcRTA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution</title><source>esp@cenet</source><creator>HAMMOND, IV EDWARD P ; PANAGOPOULOS THEODOROS ; PATERSON ALEXANDER ; TODOROV VALENTIN N ; HOLLAND JOHN P ; HATCHER BRIAN K ; KATZ DAN</creator><creatorcontrib>HAMMOND, IV EDWARD P ; PANAGOPOULOS THEODOROS ; PATERSON ALEXANDER ; TODOROV VALENTIN N ; HOLLAND JOHN P ; HATCHER BRIAN K ; KATZ DAN</creatorcontrib><description>A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through the gas distribution plate from a gas input to plural gas injection orifices, distributing the gas flow within the gas distribution plate through a succession of arcuate paths joined at respective junctions, dividing gas flow at each junction from a first respective one of said gas flow paths into a respective pair of said gas flow paths in opposite gas flow directions, and restricting the arcuate length of each of the arcuate paths to less than half-circles.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PHYSICS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100309&DB=EPODOC&CC=US&NR=7674394B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100309&DB=EPODOC&CC=US&NR=7674394B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAMMOND, IV EDWARD P</creatorcontrib><creatorcontrib>PANAGOPOULOS THEODOROS</creatorcontrib><creatorcontrib>PATERSON ALEXANDER</creatorcontrib><creatorcontrib>TODOROV VALENTIN N</creatorcontrib><creatorcontrib>HOLLAND JOHN P</creatorcontrib><creatorcontrib>HATCHER BRIAN K</creatorcontrib><creatorcontrib>KATZ DAN</creatorcontrib><title>Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution</title><description>A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through the gas distribution plate from a gas input to plural gas injection orifices, distributing the gas flow within the gas distribution plate through a succession of arcuate paths joined at respective junctions, dividing gas flow at each junction from a first respective one of said gas flow paths into a respective pair of said gas flow paths in opposite gas flow directions, and restricting the arcuate length of each of the arcuate paths to less than half-circles.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MEASURING</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEOAUEQQK9RCP5hfkDjLkRLiFKC-jL25u5G1s5mZ9bF30tQKFWvee-Ni3T0qHeEmMSRKrSSgEOTnfGD_BOc5Og5dBBloATWJ8ldDwgdKjSslviajSVA9GgEQ8-eAJtbVntnn_2vOS1GLXql2ZeTAva78_Ywpyg1aURHgay-nFbLVVWuq82i_EN5ARFcRTA</recordid><startdate>20100309</startdate><enddate>20100309</enddate><creator>HAMMOND, IV EDWARD P</creator><creator>PANAGOPOULOS THEODOROS</creator><creator>PATERSON ALEXANDER</creator><creator>TODOROV VALENTIN N</creator><creator>HOLLAND JOHN P</creator><creator>HATCHER BRIAN K</creator><creator>KATZ DAN</creator><scope>EVB</scope></search><sort><creationdate>20100309</creationdate><title>Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution</title><author>HAMMOND, IV EDWARD P ; PANAGOPOULOS THEODOROS ; PATERSON ALEXANDER ; TODOROV VALENTIN N ; HOLLAND JOHN P ; HATCHER BRIAN K ; KATZ DAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7674394B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MEASURING</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>HAMMOND, IV EDWARD P</creatorcontrib><creatorcontrib>PANAGOPOULOS THEODOROS</creatorcontrib><creatorcontrib>PATERSON ALEXANDER</creatorcontrib><creatorcontrib>TODOROV VALENTIN N</creatorcontrib><creatorcontrib>HOLLAND JOHN P</creatorcontrib><creatorcontrib>HATCHER BRIAN K</creatorcontrib><creatorcontrib>KATZ DAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAMMOND, IV EDWARD P</au><au>PANAGOPOULOS THEODOROS</au><au>PATERSON ALEXANDER</au><au>TODOROV VALENTIN N</au><au>HOLLAND JOHN P</au><au>HATCHER BRIAN K</au><au>KATZ DAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution</title><date>2010-03-09</date><risdate>2010</risdate><abstract>A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through the gas distribution plate from a gas input to plural gas injection orifices, distributing the gas flow within the gas distribution plate through a succession of arcuate paths joined at respective junctions, dividing gas flow at each junction from a first respective one of said gas flow paths into a respective pair of said gas flow paths in opposite gas flow directions, and restricting the arcuate length of each of the arcuate paths to less than half-circles.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING |
| title | Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T11%3A11%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HAMMOND,%20IV%20EDWARD%20P&rft.date=2010-03-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7674394B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |