Manufacture of electronic devices comprising thin-film circuit elements

In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimization of the respective TFT and diode prop...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	YOUNG NIGEL D
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LABELS OR NAME-PLATES PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	YOUNG NIGEL D
description	In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimization of the respective TFT and diode properties while being compatible with the complex pixel context of the display. High temperature processes for making the active semiconductor film (10) of the TFT more crystalline than an active semiconductor film (40) of the diode and for forming the source and drain doped regions (s1,s2, d1,d2) of the TFT are carried out before depositing the active semiconductor film (40) of the diode. Thereafter, the lateral extent of the diode is defined by etching while protecting with an etch-stop film (30) an interconnection film (20) that can provide a doped bottom electrode region (41) of the diode as well as one of the doped regions (s2, g1) of the TFT.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7645646B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7645646B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7645646B23</originalsourceid><addsrcrecordid>eNqNyjsOwjAMANAsDKhwB1-gSylhB_FZmIC5ioxDLSVOlDicHyFxAKa3vKU5X50071BbIUgeKBBqScIIT3ozUgVMMReuLC_QmaX3HCIgF2ys3x9JtK7MwrtQaf2zM3A63g-XnnKaqGaHJKTT47az49aOdj9s_igfTf80Wg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacture of electronic devices comprising thin-film circuit elements</title><source>esp@cenet</source><creator>YOUNG NIGEL D</creator><creatorcontrib>YOUNG NIGEL D</creatorcontrib><description>In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimization of the respective TFT and diode properties while being compatible with the complex pixel context of the display. High temperature processes for making the active semiconductor film (10) of the TFT more crystalline than an active semiconductor film (40) of the diode and for forming the source and drain doped regions (s1,s2, d1,d2) of the TFT are carried out before depositing the active semiconductor film (40) of the diode. Thereafter, the lateral extent of the diode is defined by etching while protecting with an etch-stop film (30) an interconnection film (20) that can provide a doped bottom electrode region (41) of the diode as well as one of the doped regions (s2, g1) of the TFT.</description><language>eng</language><subject>ADVERTISING ; BASIC ELECTRIC ELEMENTS ; CRYPTOGRAPHY ; DISPLAY ; DISPLAYING ; EDUCATION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LABELS OR NAME-PLATES ; PHYSICS ; SEALS ; SEMICONDUCTOR DEVICES ; SIGNS</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100112&DB=EPODOC&CC=US&NR=7645646B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100112&DB=EPODOC&CC=US&NR=7645646B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOUNG NIGEL D</creatorcontrib><title>Manufacture of electronic devices comprising thin-film circuit elements</title><description>In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimization of the respective TFT and diode properties while being compatible with the complex pixel context of the display. High temperature processes for making the active semiconductor film (10) of the TFT more crystalline than an active semiconductor film (40) of the diode and for forming the source and drain doped regions (s1,s2, d1,d2) of the TFT are carried out before depositing the active semiconductor film (40) of the diode. Thereafter, the lateral extent of the diode is defined by etching while protecting with an etch-stop film (30) an interconnection film (20) that can provide a doped bottom electrode region (41) of the diode as well as one of the doped regions (s2, g1) of the TFT.</description><subject>ADVERTISING</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CRYPTOGRAPHY</subject><subject>DISPLAY</subject><subject>DISPLAYING</subject><subject>EDUCATION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LABELS OR NAME-PLATES</subject><subject>PHYSICS</subject><subject>SEALS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SIGNS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjsOwjAMANAsDKhwB1-gSylhB_FZmIC5ioxDLSVOlDicHyFxAKa3vKU5X50071BbIUgeKBBqScIIT3ozUgVMMReuLC_QmaX3HCIgF2ys3x9JtK7MwrtQaf2zM3A63g-XnnKaqGaHJKTT47az49aOdj9s_igfTf80Wg</recordid><startdate>20100112</startdate><enddate>20100112</enddate><creator>YOUNG NIGEL D</creator><scope>EVB</scope></search><sort><creationdate>20100112</creationdate><title>Manufacture of electronic devices comprising thin-film circuit elements</title><author>YOUNG NIGEL D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7645646B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ADVERTISING</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CRYPTOGRAPHY</topic><topic>DISPLAY</topic><topic>DISPLAYING</topic><topic>EDUCATION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LABELS OR NAME-PLATES</topic><topic>PHYSICS</topic><topic>SEALS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SIGNS</topic><toplevel>online_resources</toplevel><creatorcontrib>YOUNG NIGEL D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOUNG NIGEL D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacture of electronic devices comprising thin-film circuit elements</title><date>2010-01-12</date><risdate>2010</risdate><abstract>In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimization of the respective TFT and diode properties while being compatible with the complex pixel context of the display. High temperature processes for making the active semiconductor film (10) of the TFT more crystalline than an active semiconductor film (40) of the diode and for forming the source and drain doped regions (s1,s2, d1,d2) of the TFT are carried out before depositing the active semiconductor film (40) of the diode. Thereafter, the lateral extent of the diode is defined by etching while protecting with an etch-stop film (30) an interconnection film (20) that can provide a doped bottom electrode region (41) of the diode as well as one of the doped regions (s2, g1) of the TFT.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US7645646B2
source	esp@cenet
subjects	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LABELS OR NAME-PLATES PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS
title	Manufacture of electronic devices comprising thin-film circuit elements
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T06%3A57%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YOUNG%20NIGEL%20D&rft.date=2010-01-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7645646B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true