Method of fabricating a semiconductor device

Embodiments relate to a method of fabricating a semiconductor device. In embodiments, a gate pattern may be formed on a semiconductor substrate, and sidewalls having a lower height than a height of the gate pattern may be formed at both sides of the gate pattern using a photoresist pattern. A silici...

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1. Verfasser: MYUNG JUNG HAK
Format: Patent
Sprache:eng
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