Optimized correction of wafer thermal deformations in a lithographic process
A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measur...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | OTTENS JOOST JEROEN VAN DER SCHOOT HARMEN KLAAS MAAS WOUTERUS JOHANNES PETRUS MARIA STARREVELD JEROEN PIETER VENEMA WILLEM JURRIANUS MENCHTCHIKOV BORIS |
| description | A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7595496B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7595496B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7595496B23</originalsourceid><addsrcrecordid>eNqNijEKAjEQANNYiPqH_YCNesq1imIhWKj1seQ2l4VcdtkEBF-vgg-wmoGZqbtctfLIL-rBixn5ypJBAjwxkEGNZCMm6CnIR76xAGdASFyjDIYa2YOaeCpl7iYBU6HFjzMHp-P9cF6SSkdF0VOm2j1uu6ZtNu12v1r_sbwBgDk2Qw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Optimized correction of wafer thermal deformations in a lithographic process</title><source>esp@cenet</source><creator>OTTENS JOOST JEROEN ; VAN DER SCHOOT HARMEN KLAAS ; MAAS WOUTERUS JOHANNES PETRUS MARIA ; STARREVELD JEROEN PIETER ; VENEMA WILLEM JURRIANUS ; MENCHTCHIKOV BORIS</creator><creatorcontrib>OTTENS JOOST JEROEN ; VAN DER SCHOOT HARMEN KLAAS ; MAAS WOUTERUS JOHANNES PETRUS MARIA ; STARREVELD JEROEN PIETER ; VENEMA WILLEM JURRIANUS ; MENCHTCHIKOV BORIS</creatorcontrib><description>A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GAMMA RAY OR X-RAY MICROSCOPES ; HOLOGRAPHY ; IRRADIATION DEVICES ; MATERIALS THEREFOR ; NUCLEAR ENGINEERING ; NUCLEAR PHYSICS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090929&DB=EPODOC&CC=US&NR=7595496B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090929&DB=EPODOC&CC=US&NR=7595496B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OTTENS JOOST JEROEN</creatorcontrib><creatorcontrib>VAN DER SCHOOT HARMEN KLAAS</creatorcontrib><creatorcontrib>MAAS WOUTERUS JOHANNES PETRUS MARIA</creatorcontrib><creatorcontrib>STARREVELD JEROEN PIETER</creatorcontrib><creatorcontrib>VENEMA WILLEM JURRIANUS</creatorcontrib><creatorcontrib>MENCHTCHIKOV BORIS</creatorcontrib><title>Optimized correction of wafer thermal deformations in a lithographic process</title><description>A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>GAMMA RAY OR X-RAY MICROSCOPES</subject><subject>HOLOGRAPHY</subject><subject>IRRADIATION DEVICES</subject><subject>MATERIALS THEREFOR</subject><subject>NUCLEAR ENGINEERING</subject><subject>NUCLEAR PHYSICS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNijEKAjEQANNYiPqH_YCNesq1imIhWKj1seQ2l4VcdtkEBF-vgg-wmoGZqbtctfLIL-rBixn5ypJBAjwxkEGNZCMm6CnIR76xAGdASFyjDIYa2YOaeCpl7iYBU6HFjzMHp-P9cF6SSkdF0VOm2j1uu6ZtNu12v1r_sbwBgDk2Qw</recordid><startdate>20090929</startdate><enddate>20090929</enddate><creator>OTTENS JOOST JEROEN</creator><creator>VAN DER SCHOOT HARMEN KLAAS</creator><creator>MAAS WOUTERUS JOHANNES PETRUS MARIA</creator><creator>STARREVELD JEROEN PIETER</creator><creator>VENEMA WILLEM JURRIANUS</creator><creator>MENCHTCHIKOV BORIS</creator><scope>EVB</scope></search><sort><creationdate>20090929</creationdate><title>Optimized correction of wafer thermal deformations in a lithographic process</title><author>OTTENS JOOST JEROEN ; VAN DER SCHOOT HARMEN KLAAS ; MAAS WOUTERUS JOHANNES PETRUS MARIA ; STARREVELD JEROEN PIETER ; VENEMA WILLEM JURRIANUS ; MENCHTCHIKOV BORIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7595496B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>GAMMA RAY OR X-RAY MICROSCOPES</topic><topic>HOLOGRAPHY</topic><topic>IRRADIATION DEVICES</topic><topic>MATERIALS THEREFOR</topic><topic>NUCLEAR ENGINEERING</topic><topic>NUCLEAR PHYSICS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</topic><toplevel>online_resources</toplevel><creatorcontrib>OTTENS JOOST JEROEN</creatorcontrib><creatorcontrib>VAN DER SCHOOT HARMEN KLAAS</creatorcontrib><creatorcontrib>MAAS WOUTERUS JOHANNES PETRUS MARIA</creatorcontrib><creatorcontrib>STARREVELD JEROEN PIETER</creatorcontrib><creatorcontrib>VENEMA WILLEM JURRIANUS</creatorcontrib><creatorcontrib>MENCHTCHIKOV BORIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OTTENS JOOST JEROEN</au><au>VAN DER SCHOOT HARMEN KLAAS</au><au>MAAS WOUTERUS JOHANNES PETRUS MARIA</au><au>STARREVELD JEROEN PIETER</au><au>VENEMA WILLEM JURRIANUS</au><au>MENCHTCHIKOV BORIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Optimized correction of wafer thermal deformations in a lithographic process</title><date>2009-09-29</date><risdate>2009</risdate><abstract>A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US7595496B2 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR |
| title | Optimized correction of wafer thermal deformations in a lithographic process |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T02%3A25%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OTTENS%20JOOST%20JEROEN&rft.date=2009-09-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7595496B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |