Stray light feedback for dose control in semiconductor lithography systems
A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the se...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | LI WAI-KIN MAROKKEY SAJAN BAILEY TODD C |
description | A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7583362B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7583362B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7583362B23</originalsourceid><addsrcrecordid>eNqNijsOAiEQQGksjHqHuYDNEj-1RmNsV-sNwrAQWYYwY8Ht3cIDWL28vLdU916qaZDiGAQ8onsZ-wZPFRwxgqUslRLEDIxTnNV9rMw1RQk0VlNCA24sOPFaLbxJjJsfVwqul8f5tsVCA3IxFjPK8OwPu6PW--7U6T-WL_XgNYM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Stray light feedback for dose control in semiconductor lithography systems</title><source>esp@cenet</source><creator>LI WAI-KIN ; MAROKKEY SAJAN ; BAILEY TODD C</creator><creatorcontrib>LI WAI-KIN ; MAROKKEY SAJAN ; BAILEY TODD C</creatorcontrib><description>A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.</description><language>eng</language><subject>ACCESSORIES THEREFOR ; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES ; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; PHOTOGRAPHY ; PHYSICS</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090901&DB=EPODOC&CC=US&NR=7583362B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090901&DB=EPODOC&CC=US&NR=7583362B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI WAI-KIN</creatorcontrib><creatorcontrib>MAROKKEY SAJAN</creatorcontrib><creatorcontrib>BAILEY TODD C</creatorcontrib><title>Stray light feedback for dose control in semiconductor lithography systems</title><description>A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.</description><subject>ACCESSORIES THEREFOR</subject><subject>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</subject><subject>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>PHOTOGRAPHY</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNijsOAiEQQGksjHqHuYDNEj-1RmNsV-sNwrAQWYYwY8Ht3cIDWL28vLdU916qaZDiGAQ8onsZ-wZPFRwxgqUslRLEDIxTnNV9rMw1RQk0VlNCA24sOPFaLbxJjJsfVwqul8f5tsVCA3IxFjPK8OwPu6PW--7U6T-WL_XgNYM</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>LI WAI-KIN</creator><creator>MAROKKEY SAJAN</creator><creator>BAILEY TODD C</creator><scope>EVB</scope></search><sort><creationdate>20090901</creationdate><title>Stray light feedback for dose control in semiconductor lithography systems</title><author>LI WAI-KIN ; MAROKKEY SAJAN ; BAILEY TODD C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7583362B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>ACCESSORIES THEREFOR</topic><topic>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</topic><topic>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>PHOTOGRAPHY</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>LI WAI-KIN</creatorcontrib><creatorcontrib>MAROKKEY SAJAN</creatorcontrib><creatorcontrib>BAILEY TODD C</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI WAI-KIN</au><au>MAROKKEY SAJAN</au><au>BAILEY TODD C</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Stray light feedback for dose control in semiconductor lithography systems</title><date>2009-09-01</date><risdate>2009</risdate><abstract>A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US7583362B2 |
source | esp@cenet |
subjects | ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY PHOTOGRAPHY PHYSICS |
title | Stray light feedback for dose control in semiconductor lithography systems |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T17%3A19%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LI%20WAI-KIN&rft.date=2009-09-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7583362B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |