Method of fabricating a semiconductor device using plasma to form an insulating film

A fabrication method of a semiconductor device is disclosed by which damage to another film or exfoliation of a film is prevented and an insulating film having a dielectric constant of 2.5 or less can be formed while a film strength is maintained without deteriorating a wiring line characteristic. A...

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Bibliographische Detailangaben

1. Verfasser:	TABUCHI KIYOTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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