N-Channel MOS transistor fabricated using a reduced cost CMOS process

An NMOS transistor includes a semiconductor substrate of a first conductivity type, first and second well regions of a second conductivity type formed spaced apart in the substrate, a conductive gate formed over the region between the spaced apart first and second well regions where the region of th...

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1. Verfasser:	ALTER MARTIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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