Method of forming semiconductor devices by microwave curing of low-k dielectric films

The invention provides a method of exposing low-k dielectric films to microwave radiation to cure the dielectric films. Microwave curing reduces the cure-time necessary to achieve the desired mechanical properties in the low-k films, thus decreasing the thermal exposure time for the NiSi transistor...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RYAN E. TODD, IACOPONI JOHN A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!