MOS transistor having protruded-shape channel and method of fabricating the same

A MOS transistor that has a protruding portion with a favorable vertical profile and a protruded-shape channel that requires no additional photolithography process, and a method of fabricating the same are provided. A first mask that defines an isolation region of a substrate is overall etched to fo...

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Bibliographische Detailangaben

1. Verfasser:	JANG YOUNGUL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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