Semiconductor device having a minimal via resistance created by applying a nitrogen plasma to a titanium via liner

A system and method is disclosed for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition. A via in a semiconductor device is formed by placing a metal layer on a substrate and placing a layer of anti-reflective coating (ARC) titanium nitride (TiN) o...

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Bibliographische Detailangaben
Hauptverfasser: DRIZLIKH SERGEI, FRANCIS THOMAS JOHN
Format: Patent
Sprache:eng
Schlagworte:
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