Fluid ejection device structures and methods therefor
Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography...
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creator | MCNEES ANDREW L KRAWCZYK JOHN W |
description | Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7524430B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7524430B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7524430B23</originalsourceid><addsrcrecordid>eNrjZDB1yynNTFFIzUpNLsnMz1NISS3LTE5VKC4pKk0uKS1KLVZIzEtRyE0tychPKVYoyUgtSk3LL-JhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhweamRiYmxgZORsZEKAEANG8tPw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Fluid ejection device structures and methods therefor</title><source>esp@cenet</source><creator>MCNEES ANDREW L ; KRAWCZYK JOHN W</creator><creatorcontrib>MCNEES ANDREW L ; KRAWCZYK JOHN W</creatorcontrib><description>Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography.</description><language>eng</language><subject>CORRECTION OF TYPOGRAPHICAL ERRORS ; i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME ; LINING MACHINES ; PERFORMING OPERATIONS ; PRINTING ; PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCESIN A PLASTIC STATE ; SELECTIVE PRINTING MECHANISMS ; STAMPS ; TRANSPORTING ; TYPEWRITERS ; WORKING OF PLASTICS ; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090428&DB=EPODOC&CC=US&NR=7524430B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090428&DB=EPODOC&CC=US&NR=7524430B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MCNEES ANDREW L</creatorcontrib><creatorcontrib>KRAWCZYK JOHN W</creatorcontrib><title>Fluid ejection device structures and methods therefor</title><description>Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography.</description><subject>CORRECTION OF TYPOGRAPHICAL ERRORS</subject><subject>i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME</subject><subject>LINING MACHINES</subject><subject>PERFORMING OPERATIONS</subject><subject>PRINTING</subject><subject>PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCESIN A PLASTIC STATE</subject><subject>SELECTIVE PRINTING MECHANISMS</subject><subject>STAMPS</subject><subject>TRANSPORTING</subject><subject>TYPEWRITERS</subject><subject>WORKING OF PLASTICS</subject><subject>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB1yynNTFFIzUpNLsnMz1NISS3LTE5VKC4pKk0uKS1KLVZIzEtRyE0tychPKVYoyUgtSk3LL-JhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhweamRiYmxgZORsZEKAEANG8tPw</recordid><startdate>20090428</startdate><enddate>20090428</enddate><creator>MCNEES ANDREW L</creator><creator>KRAWCZYK JOHN W</creator><scope>EVB</scope></search><sort><creationdate>20090428</creationdate><title>Fluid ejection device structures and methods therefor</title><author>MCNEES ANDREW L ; KRAWCZYK JOHN W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7524430B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>CORRECTION OF TYPOGRAPHICAL ERRORS</topic><topic>i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME</topic><topic>LINING MACHINES</topic><topic>PERFORMING OPERATIONS</topic><topic>PRINTING</topic><topic>PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCESIN A PLASTIC STATE</topic><topic>SELECTIVE PRINTING MECHANISMS</topic><topic>STAMPS</topic><topic>TRANSPORTING</topic><topic>TYPEWRITERS</topic><topic>WORKING OF PLASTICS</topic><topic>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</topic><toplevel>online_resources</toplevel><creatorcontrib>MCNEES ANDREW L</creatorcontrib><creatorcontrib>KRAWCZYK JOHN W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MCNEES ANDREW L</au><au>KRAWCZYK JOHN W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Fluid ejection device structures and methods therefor</title><date>2009-04-28</date><risdate>2009</risdate><abstract>Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CORRECTION OF TYPOGRAPHICAL ERRORS i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME LINING MACHINES PERFORMING OPERATIONS PRINTING PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCESIN A PLASTIC STATE SELECTIVE PRINTING MECHANISMS STAMPS TRANSPORTING TYPEWRITERS WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL |
title | Fluid ejection device structures and methods therefor |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T23%3A39%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MCNEES%20ANDREW%20L&rft.date=2009-04-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7524430B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |