Silicon solar cell and production method thereof

Silicon solar cell and production method thereof

It is an object of the present invention to provide a silicon solar cell with n+pp+ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate. The solar cell of the present invention is produced by a back side boron diffusion step for diffusing...

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Hauptverfasser: JOGE TOSHIO, HOSOYA TOMONORI, ARAKI ICHIRO
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator JOGE TOSHIO
HOSOYA TOMONORI
ARAKI ICHIRO
description It is an object of the present invention to provide a silicon solar cell with n+pp+ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate. The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7495167B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7495167B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7495167B23</originalsourceid><addsrcrecordid>eNrjZDAIzszJTM7PUyjOz0ksUkhOzclRSMxLUSgoyk8pTS7JBMrkppZk5KcolGSkFqXmp_EwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYHMTS1NDM3MnI2MilAAAFJErMQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Silicon solar cell and production method thereof</title><source>esp@cenet</source><creator>JOGE TOSHIO ; HOSOYA TOMONORI ; ARAKI ICHIRO</creator><creatorcontrib>JOGE TOSHIO ; HOSOYA TOMONORI ; ARAKI ICHIRO</creatorcontrib><description>It is an object of the present invention to provide a silicon solar cell with n+pp+ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate. The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090224&amp;DB=EPODOC&amp;CC=US&amp;NR=7495167B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090224&amp;DB=EPODOC&amp;CC=US&amp;NR=7495167B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOGE TOSHIO</creatorcontrib><creatorcontrib>HOSOYA TOMONORI</creatorcontrib><creatorcontrib>ARAKI ICHIRO</creatorcontrib><title>Silicon solar cell and production method thereof</title><description>It is an object of the present invention to provide a silicon solar cell with n+pp+ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate. The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAIzszJTM7PUyjOz0ksUkhOzclRSMxLUSgoyk8pTS7JBMrkppZk5KcolGSkFqXmp_EwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYHMTS1NDM3MnI2MilAAAFJErMQ</recordid><startdate>20090224</startdate><enddate>20090224</enddate><creator>JOGE TOSHIO</creator><creator>HOSOYA TOMONORI</creator><creator>ARAKI ICHIRO</creator><scope>EVB</scope></search><sort><creationdate>20090224</creationdate><title>Silicon solar cell and production method thereof</title><author>JOGE TOSHIO ; HOSOYA TOMONORI ; ARAKI ICHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7495167B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JOGE TOSHIO</creatorcontrib><creatorcontrib>HOSOYA TOMONORI</creatorcontrib><creatorcontrib>ARAKI ICHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOGE TOSHIO</au><au>HOSOYA TOMONORI</au><au>ARAKI ICHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Silicon solar cell and production method thereof</title><date>2009-02-24</date><risdate>2009</risdate><abstract>It is an object of the present invention to provide a silicon solar cell with n+pp+ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate. The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Silicon solar cell and production method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T13%3A39%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JOGE%20TOSHIO&rft.date=2009-02-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7495167B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true