Chromeless phase shifting mask for integrated circuits using interior region

A system for creating mask layout pattern data in order to create a number of desired features on a semiconductor wafer. Critical features and features that are adjacent to or abut critical features are formed as phase shifting regions on a mask. Larger, non-critical features can be formed as annula...

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creator WORD JAMES
description A system for creating mask layout pattern data in order to create a number of desired features on a semiconductor wafer. Critical features and features that are adjacent to or abut critical features are formed as phase shifting regions on a mask. Larger, non-critical features can be formed as annular rim shifters and may include one or more filling phase shifting regions. Non-critical features that are not adjacent to critical features and/or sub-resolution features that are not desired to print on the wafer can be formed as opaque or partially transparent regions on the mask.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7493587B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7493587B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7493587B23</originalsourceid><addsrcrecordid>eNqNyjEOwjAQBVE3FAi4w16AhoACbSIQBR1QR5b5jlcktrXr3B8icQCqKeYtza0NkkYMUKUcrII0sC8cexqtvsknIY4FvdiCFzkWN3FRmnQm8xH-EkHPKa7NwttBsfl1ZehyfrTXLXLqoNk6RJTuea_3p-pwrJtd9Qf5AIPHNlM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Chromeless phase shifting mask for integrated circuits using interior region</title><source>esp@cenet</source><creator>WORD JAMES</creator><creatorcontrib>WORD JAMES</creatorcontrib><description>A system for creating mask layout pattern data in order to create a number of desired features on a semiconductor wafer. Critical features and features that are adjacent to or abut critical features are formed as phase shifting regions on a mask. Larger, non-critical features can be formed as annular rim shifters and may include one or more filling phase shifting regions. Non-critical features that are not adjacent to critical features and/or sub-resolution features that are not desired to print on the wafer can be formed as opaque or partially transparent regions on the mask.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CALCULATING ; CINEMATOGRAPHY ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090217&amp;DB=EPODOC&amp;CC=US&amp;NR=7493587B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090217&amp;DB=EPODOC&amp;CC=US&amp;NR=7493587B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WORD JAMES</creatorcontrib><title>Chromeless phase shifting mask for integrated circuits using interior region</title><description>A system for creating mask layout pattern data in order to create a number of desired features on a semiconductor wafer. Critical features and features that are adjacent to or abut critical features are formed as phase shifting regions on a mask. Larger, non-critical features can be formed as annular rim shifters and may include one or more filling phase shifting regions. Non-critical features that are not adjacent to critical features and/or sub-resolution features that are not desired to print on the wafer can be formed as opaque or partially transparent regions on the mask.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CALCULATING</subject><subject>CINEMATOGRAPHY</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAQBVE3FAi4w16AhoACbSIQBR1QR5b5jlcktrXr3B8icQCqKeYtza0NkkYMUKUcrII0sC8cexqtvsknIY4FvdiCFzkWN3FRmnQm8xH-EkHPKa7NwttBsfl1ZehyfrTXLXLqoNk6RJTuea_3p-pwrJtd9Qf5AIPHNlM</recordid><startdate>20090217</startdate><enddate>20090217</enddate><creator>WORD JAMES</creator><scope>EVB</scope></search><sort><creationdate>20090217</creationdate><title>Chromeless phase shifting mask for integrated circuits using interior region</title><author>WORD JAMES</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7493587B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CALCULATING</topic><topic>CINEMATOGRAPHY</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>WORD JAMES</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WORD JAMES</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chromeless phase shifting mask for integrated circuits using interior region</title><date>2009-02-17</date><risdate>2009</risdate><abstract>A system for creating mask layout pattern data in order to create a number of desired features on a semiconductor wafer. Critical features and features that are adjacent to or abut critical features are formed as phase shifting regions on a mask. Larger, non-critical features can be formed as annular rim shifters and may include one or more filling phase shifting regions. Non-critical features that are not adjacent to critical features and/or sub-resolution features that are not desired to print on the wafer can be formed as opaque or partially transparent regions on the mask.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title Chromeless phase shifting mask for integrated circuits using interior region
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T17%3A58%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WORD%20JAMES&rft.date=2009-02-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7493587B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true