Phase-change random access memory device

Phase-change random access memory device

A phase-change random access memory device is provided. The phase-change random access memory device includes a plurality of memory blocks, a main word line, a plurality of local word lines and a plurality of section word line drivers connected between the main word line and each of the plurality of...

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Hauptverfasser: LEE CHANG-SOO, LIM BO-TAK, CHOI BYUNG-GIL
Format: Patent
Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator LEE CHANG-SOO
LIM BO-TAK
CHOI BYUNG-GIL
description A phase-change random access memory device is provided. The phase-change random access memory device includes a plurality of memory blocks, a main word line, a plurality of local word lines and a plurality of section word line drivers connected between the main word line and each of the plurality of local word lines and adapted to adjusting voltage levels of the plurality of local word lines in response of voltages applied to the main word line and block information. The plurality of section word line drivers include at least one first section word line driver and at least one second section word line driver. The first section word line drivers include pull-down devices while not including pull-up devices.
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PHYSICS
STATIC STORES
title Phase-change random access memory device
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