Method of manufacturing a multi-workfunction gates for a CMOS circuit

A method of manufacturing a device includes doping a low voltage threshold area and a high voltage threshold area. Gate structures are formed over the low voltage threshold and high voltage threshold areas while protecting the gate structure over the low voltage threshold area. A silicidation proces...

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Hauptverfasser:	CHEN XIANGDONG, RENGARAJAN RAJESH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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