Method of fabricating a switching regulator with a high-side p-type device

A first impurity region of a first type is implanted to have a first surface area on a substrate. A second impurity region of an opposite second type is implanted into a drain region of the transistor to have a second surface area in the first surface area of the first impurity region. A gate oxide...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YOU BUDONG, ZUNIGA MARCO A, BURSTEIN ANDREW J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!