Enhancement of electron and hole mobilities in Si under biaxial compressive strain

The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term "biaxial compressive stress" is used herein to describe the net stress caused...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	REZNICEK ALEXANDER, SUNG CHUN-YUNG, FISCHETTI MASSIMO V, RENGARAJAN RAJESH, HERGENROTHER JOHN M, IEONG MEIKEI, YANG MIN, CHAN VICTOR, SOLOMON PAUL M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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