Methods of applying read voltages in NAND flash memory arrays

Provided is a method of improving the read disturb characteristics of a flash memory array. According to the method, in a flash memory array having at least one cell string in which a string selection transistor, a plurality of memory cells, and a ground selection transistor are connected in series,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN EUI-GYU, KANG HYUNG-SEOK, LEE JIN-YUB, HAN GYEONG-SOO, KIM HOO-SUNG
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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