Active compensation for operating point drift in MRAM write operation

A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orie...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ABRAHAM DAVID WILLIAM, TROUILLOUD PHILIP LOUIS
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ABRAHAM DAVID WILLIAM
TROUILLOUD PHILIP LOUIS
description A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orientation of the magnetization in the reference cell is monitored. The write current is then modified to compensate for any changes in the optimum operating point that have occurred. Arrays of reference magnetic memory cells having varying properties may be used to more accurately characterize any changes that have occurred in the operating environment. A phase difference between a time varying current used to drive the reference cell and the corresponding variations in the orientation of the magnetization in the reference cell may also be used to further characterize changes in the operating environment.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7453747B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7453747B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7453747B23</originalsourceid><addsrcrecordid>eNrjZHB1TC7JLEtVSM7PLUjNK04syczPU0jLL1LIL0gtAvLy0hUK8jPzShRSijLTShQy8xR8gxx9FcqLMktSYWry83gYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSXxosLmJqbG5ibmTkTERSgCNujLn</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Active compensation for operating point drift in MRAM write operation</title><source>esp@cenet</source><creator>ABRAHAM DAVID WILLIAM ; TROUILLOUD PHILIP LOUIS</creator><creatorcontrib>ABRAHAM DAVID WILLIAM ; TROUILLOUD PHILIP LOUIS</creatorcontrib><description>A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orientation of the magnetization in the reference cell is monitored. The write current is then modified to compensate for any changes in the optimum operating point that have occurred. Arrays of reference magnetic memory cells having varying properties may be used to more accurately characterize any changes that have occurred in the operating environment. A phase difference between a time varying current used to drive the reference cell and the corresponding variations in the orientation of the magnetization in the reference cell may also be used to further characterize changes in the operating environment.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20081118&amp;DB=EPODOC&amp;CC=US&amp;NR=7453747B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20081118&amp;DB=EPODOC&amp;CC=US&amp;NR=7453747B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ABRAHAM DAVID WILLIAM</creatorcontrib><creatorcontrib>TROUILLOUD PHILIP LOUIS</creatorcontrib><title>Active compensation for operating point drift in MRAM write operation</title><description>A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orientation of the magnetization in the reference cell is monitored. The write current is then modified to compensate for any changes in the optimum operating point that have occurred. Arrays of reference magnetic memory cells having varying properties may be used to more accurately characterize any changes that have occurred in the operating environment. A phase difference between a time varying current used to drive the reference cell and the corresponding variations in the orientation of the magnetization in the reference cell may also be used to further characterize changes in the operating environment.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB1TC7JLEtVSM7PLUjNK04syczPU0jLL1LIL0gtAvLy0hUK8jPzShRSijLTShQy8xR8gxx9FcqLMktSYWry83gYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSXxosLmJqbG5ibmTkTERSgCNujLn</recordid><startdate>20081118</startdate><enddate>20081118</enddate><creator>ABRAHAM DAVID WILLIAM</creator><creator>TROUILLOUD PHILIP LOUIS</creator><scope>EVB</scope></search><sort><creationdate>20081118</creationdate><title>Active compensation for operating point drift in MRAM write operation</title><author>ABRAHAM DAVID WILLIAM ; TROUILLOUD PHILIP LOUIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7453747B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ABRAHAM DAVID WILLIAM</creatorcontrib><creatorcontrib>TROUILLOUD PHILIP LOUIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ABRAHAM DAVID WILLIAM</au><au>TROUILLOUD PHILIP LOUIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Active compensation for operating point drift in MRAM write operation</title><date>2008-11-18</date><risdate>2008</risdate><abstract>A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orientation of the magnetization in the reference cell is monitored. The write current is then modified to compensate for any changes in the optimum operating point that have occurred. Arrays of reference magnetic memory cells having varying properties may be used to more accurately characterize any changes that have occurred in the operating environment. A phase difference between a time varying current used to drive the reference cell and the corresponding variations in the orientation of the magnetization in the reference cell may also be used to further characterize changes in the operating environment.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US7453747B2
source esp@cenet
subjects CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Active compensation for operating point drift in MRAM write operation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T10%3A32%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ABRAHAM%20DAVID%20WILLIAM&rft.date=2008-11-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7453747B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true