Methods of forming capacitor constructions

The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxid...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SRIVIDYA CANCHEEPURAM V, GEALY F. DANIEL, BHAT VISHWANATH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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