Filling narrow and high aspect ratio openings using electroless deposition

Methods of fabricating an interconnect utilizing an electroless deposition technique, which fundamentally consists of providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, and electrolessly depositing a conductive material within...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TSANG CHI-HWA, CHOWDHURY SHAESTAGIR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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