Hydrogen and oxygen based photoresist removal process
The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, a...
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| creator | SHAH VINAY SMITH PATRICIA BEAUREGARD MATZ LAURA M |
| description | The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7413994B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7413994B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7413994B23</originalsourceid><addsrcrecordid>eNrjZDD1qEwpyk9PzVNIzEtRyK-oBDGTEotTUxQKMvJL8otSizOLSxSKUnPzyxJzFAqK8pNTi4t5GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakl8aLC5iaGxpaWJk5ExEUoARSstfQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Hydrogen and oxygen based photoresist removal process</title><source>esp@cenet</source><creator>SHAH VINAY ; SMITH PATRICIA BEAUREGARD ; MATZ LAURA M</creator><creatorcontrib>SHAH VINAY ; SMITH PATRICIA BEAUREGARD ; MATZ LAURA M</creatorcontrib><description>The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080819&DB=EPODOC&CC=US&NR=7413994B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080819&DB=EPODOC&CC=US&NR=7413994B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHAH VINAY</creatorcontrib><creatorcontrib>SMITH PATRICIA BEAUREGARD</creatorcontrib><creatorcontrib>MATZ LAURA M</creatorcontrib><title>Hydrogen and oxygen based photoresist removal process</title><description>The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1qEwpyk9PzVNIzEtRyK-oBDGTEotTUxQKMvJL8otSizOLSxSKUnPzyxJzFAqK8pNTi4t5GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakl8aLC5iaGxpaWJk5ExEUoARSstfQ</recordid><startdate>20080819</startdate><enddate>20080819</enddate><creator>SHAH VINAY</creator><creator>SMITH PATRICIA BEAUREGARD</creator><creator>MATZ LAURA M</creator><scope>EVB</scope></search><sort><creationdate>20080819</creationdate><title>Hydrogen and oxygen based photoresist removal process</title><author>SHAH VINAY ; SMITH PATRICIA BEAUREGARD ; MATZ LAURA M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7413994B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHAH VINAY</creatorcontrib><creatorcontrib>SMITH PATRICIA BEAUREGARD</creatorcontrib><creatorcontrib>MATZ LAURA M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHAH VINAY</au><au>SMITH PATRICIA BEAUREGARD</au><au>MATZ LAURA M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Hydrogen and oxygen based photoresist removal process</title><date>2008-08-19</date><risdate>2008</risdate><abstract>The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Hydrogen and oxygen based photoresist removal process |
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