Etch-stop layers for patterning block structures for reducing thermal protrusion

Etch-stop layers for patterning block structures for reducing thermal protrusion

The present invention provides a thin-film structure that includes an etch-stop layer having a first side and a second side, a patterned compensation layer for dissipating thermal energy, and an etch-vulnerable layer, where the etch-stop layer substantially impedes etching. The patterned compensatio...

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Hauptverfasser: WAKHAM STACY C, KAMARAJUGADDA MALLIKA, NATARAJUN ARUN, SEETS DAVID C, KAUTZKY MICHAEL C
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
SEMICONDUCTOR DEVICES
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creator WAKHAM STACY C
KAMARAJUGADDA MALLIKA
NATARAJUN ARUN
SEETS DAVID C
KAUTZKY MICHAEL C
description The present invention provides a thin-film structure that includes an etch-stop layer having a first side and a second side, a patterned compensation layer for dissipating thermal energy, and an etch-vulnerable layer, where the etch-stop layer substantially impedes etching. The patterned compensation layer is adjacent the first side of the etch-stop layer, and the etch-vulnerable layer is adjacent the second side of the etch-stop layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
SEMICONDUCTOR DEVICES
title Etch-stop layers for patterning block structures for reducing thermal protrusion
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