Acicular silicon crystal and process for producing the same

By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular si...

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Bibliographische Detailangaben
Hauptverfasser: KANAKUSA HIROAKI, HATTA AKITMITSU, YOSHIMURA HIROAKI, ISHIMOTO KEIICHI, KAWAGOE SHINICHI
Format: Patent
Sprache:eng
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