Method of forming an interconnect structure diffusion barrier with high nitrogen content

In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaNx, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.

Bibliographische Detailangaben

Hauptverfasser:	KIM HYUNGJUN, KALDOR STEFFEN K, ROSSNAGEL STEPHEN M, CABRAL, JR. CYRIL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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