Forming method and forming system for insulation film
A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 ) and silicon nitride film ( 107 ) are formed by microwave plasma processing with a radial line slot anten...
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| creator | NAKANISHI TOSHIO MURAKAWA SHIGEMI KUMAI TOSHIKAZU |
| description | A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 ) and silicon nitride film ( 107 ) are formed by microwave plasma processing with a radial line slot antenna. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7374635B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7374635B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7374635B23</originalsourceid><addsrcrecordid>eNrjZDB1yy_KzcxLV8hNLcnIT1FIzEtRSIMKFVcWl6TmgrgKmXnFpTmJJZn5eQppmTm5PAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPjTY3NjcxMzY1MnImAglACQsLSY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Forming method and forming system for insulation film</title><source>esp@cenet</source><creator>NAKANISHI TOSHIO ; MURAKAWA SHIGEMI ; KUMAI TOSHIKAZU</creator><creatorcontrib>NAKANISHI TOSHIO ; MURAKAWA SHIGEMI ; KUMAI TOSHIKAZU</creatorcontrib><description>A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 ) and silicon nitride film ( 107 ) are formed by microwave plasma processing with a radial line slot antenna.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080520&DB=EPODOC&CC=US&NR=7374635B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080520&DB=EPODOC&CC=US&NR=7374635B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKANISHI TOSHIO</creatorcontrib><creatorcontrib>MURAKAWA SHIGEMI</creatorcontrib><creatorcontrib>KUMAI TOSHIKAZU</creatorcontrib><title>Forming method and forming system for insulation film</title><description>A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 ) and silicon nitride film ( 107 ) are formed by microwave plasma processing with a radial line slot antenna.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB1yy_KzcxLV8hNLcnIT1FIzEtRSIMKFVcWl6TmgrgKmXnFpTmJJZn5eQppmTm5PAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPjTY3NjcxMzY1MnImAglACQsLSY</recordid><startdate>20080520</startdate><enddate>20080520</enddate><creator>NAKANISHI TOSHIO</creator><creator>MURAKAWA SHIGEMI</creator><creator>KUMAI TOSHIKAZU</creator><scope>EVB</scope></search><sort><creationdate>20080520</creationdate><title>Forming method and forming system for insulation film</title><author>NAKANISHI TOSHIO ; MURAKAWA SHIGEMI ; KUMAI TOSHIKAZU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7374635B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKANISHI TOSHIO</creatorcontrib><creatorcontrib>MURAKAWA SHIGEMI</creatorcontrib><creatorcontrib>KUMAI TOSHIKAZU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKANISHI TOSHIO</au><au>MURAKAWA SHIGEMI</au><au>KUMAI TOSHIKAZU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Forming method and forming system for insulation film</title><date>2008-05-20</date><risdate>2008</risdate><abstract>A gate insulation film ( 104 ) of a MISFET ( 100 ) is constituted of a silicon oxide film ( 106 ), silicon nitride film ( 107 ), and high-permittivity film ( 108 ). The silicon oxide film ( 106 ) and silicon nitride film ( 107 ) are formed by microwave plasma processing with a radial line slot antenna.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
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| recordid | cdi_epo_espacenet_US7374635B2 |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Forming method and forming system for insulation film |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T15%3A30%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAKANISHI%20TOSHIO&rft.date=2008-05-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7374635B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |