Semiconductor device and method for fabricating the same

A semiconductor device of a dual-gate structure including a P-channel type field-effect transistor formed at a first region of a substrate and an N-channel type field-effect transistor formed at a second region of the substrate, includes a gate electrode including a polycrystalline silicon film cont...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	TSUZUMITANI AKIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!