Method and apparatus for bending electrostatic switch
An electronic circuit is formed by closely spacing metallic gate and drain interconnects to a flexible portion of a source interconnect. A gate voltage results in electrostatic attraction and lateral mechanical movement of the flexible source interconnect portion and causes an electrical short betwe...
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creator | MONSMA DOUWE JOHANNES VALENZUELA SERGIO OSVALDO |
description | An electronic circuit is formed by closely spacing metallic gate and drain interconnects to a flexible portion of a source interconnect. A gate voltage results in electrostatic attraction and lateral mechanical movement of the flexible source interconnect portion and causes an electrical short between source and drain. VanderWaals attraction between contacting source and drain can be used to provide volatile switching (springy thicker source portion) and non-volatile switching (limp thinner source portion). In accordance with the invention, an easily fabricated, high speed, low power, radiation hard, temperature independent, integrated reconfigurable electronic circuit with embedded logic and non-volatile memory can be realized. The switch uses patterned interconnect material for its structure and can be incorporated to a 3D layered structure consisting of three dimensional interconnect in which different layers and portions of the circuits are linked through volatile and non-volatile switches. |
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A gate voltage results in electrostatic attraction and lateral mechanical movement of the flexible source interconnect portion and causes an electrical short between source and drain. VanderWaals attraction between contacting source and drain can be used to provide volatile switching (springy thicker source portion) and non-volatile switching (limp thinner source portion). In accordance with the invention, an easily fabricated, high speed, low power, radiation hard, temperature independent, integrated reconfigurable electronic circuit with embedded logic and non-volatile memory can be realized. The switch uses patterned interconnect material for its structure and can be incorporated to a 3D layered structure consisting of three dimensional interconnect in which different layers and portions of the circuits are linked through volatile and non-volatile switches.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080408&DB=EPODOC&CC=US&NR=7355258B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080408&DB=EPODOC&CC=US&NR=7355258B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MONSMA DOUWE JOHANNES</creatorcontrib><creatorcontrib>VALENZUELA SERGIO OSVALDO</creatorcontrib><title>Method and apparatus for bending electrostatic switch</title><description>An electronic circuit is formed by closely spacing metallic gate and drain interconnects to a flexible portion of a source interconnect. 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The switch uses patterned interconnect material for its structure and can be incorporated to a 3D layered structure consisting of three dimensional interconnect in which different layers and portions of the circuits are linked through volatile and non-volatile switches.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1TS3JyE9RSMwD4oKCxKLEktJihbT8IoWk1LyUzLx0hdSc1OSSovziksSSzGSF4vLMkuQMHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWlyQmJyal1oSHxpsbmxqamRq4WRkTIQSACjbLT8</recordid><startdate>20080408</startdate><enddate>20080408</enddate><creator>MONSMA DOUWE JOHANNES</creator><creator>VALENZUELA SERGIO OSVALDO</creator><scope>EVB</scope></search><sort><creationdate>20080408</creationdate><title>Method and apparatus for bending electrostatic switch</title><author>MONSMA DOUWE JOHANNES ; VALENZUELA SERGIO OSVALDO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7355258B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MONSMA DOUWE JOHANNES</creatorcontrib><creatorcontrib>VALENZUELA SERGIO OSVALDO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MONSMA DOUWE JOHANNES</au><au>VALENZUELA SERGIO OSVALDO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for bending electrostatic switch</title><date>2008-04-08</date><risdate>2008</risdate><abstract>An electronic circuit is formed by closely spacing metallic gate and drain interconnects to a flexible portion of a source interconnect. A gate voltage results in electrostatic attraction and lateral mechanical movement of the flexible source interconnect portion and causes an electrical short between source and drain. VanderWaals attraction between contacting source and drain can be used to provide volatile switching (springy thicker source portion) and non-volatile switching (limp thinner source portion). In accordance with the invention, an easily fabricated, high speed, low power, radiation hard, temperature independent, integrated reconfigurable electronic circuit with embedded logic and non-volatile memory can be realized. The switch uses patterned interconnect material for its structure and can be incorporated to a 3D layered structure consisting of three dimensional interconnect in which different layers and portions of the circuits are linked through volatile and non-volatile switches.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Method and apparatus for bending electrostatic switch |
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