Field effect transistor and fabrication thereof, semiconductor device and fabrication thereof, logic circuit including the semiconductor device, and semiconductor substrate

A method for forming a Field Effect Transistor (FET) within a strain effect semiconductor layer is disclosed, whereby the source and drain of the FET are formed only in the strain effect silicon layer. The FET may be formed as a gate electrode of a p-channel type field effect transistor, and a gate...

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Hauptverfasser:	NOGUCHI TAKASHI, SONEDA MITSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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