Elastic metal gate MOS transistor for surface mobility measurement in semiconductor materials

A semiconductor wafer or sample having a substrate of semiconducting material is tested by compressing a dielectric between three electrically conductive contacts and a top surface of the semiconductor wafer or sample substrate. The dielectric has a thickness that permits tunneling current to flow t...

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Bibliographische Detailangaben

1. Verfasser:	HILLARD ROBERT J
Format:	Patent
Sprache:	eng
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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