Bonded wafer and method of producing bonded wafer

The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The pr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUGAWA SHIGETOSHI, MITANI KIYOSHI, OHMI TADAHIRO, YOKOKAWA ISAO, DEMIZU KIYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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