High voltage field effect device and method

Methods and apparatus are provided for a MOSFET ( 50, 99, 199 ) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) ( 70 ) and drain (D) ( 76 ) are spaced apart by a channel ( 90 ) underlying a gate ( 84 ) and one or more carrier drift spaces ( 92, 92 ') serially located bet...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZITOUNI MOANISS, LIN XIN, DEFRESART EDOUARD D, MORRISON JENNIFER H, PARRIS PATRICE M, DESOUZA RICHARD J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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