High voltage field effect device and method

High voltage field effect device and method

Methods and apparatus are provided for a MOSFET ( 50, 99, 199 ) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) ( 70 ) and drain (D) ( 76 ) are spaced apart by a channel ( 90 ) underlying a gate ( 84 ) and one or more carrier drift spaces ( 92, 92 ') serially located bet...

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Hauptverfasser: ZITOUNI MOANISS, LIN XIN, DEFRESART EDOUARD D, MORRISON JENNIFER H, PARRIS PATRICE M, DESOUZA RICHARD J
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ZITOUNI MOANISS
LIN XIN
DEFRESART EDOUARD D
MORRISON JENNIFER H
PARRIS PATRICE M
DESOUZA RICHARD J
description Methods and apparatus are provided for a MOSFET ( 50, 99, 199 ) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) ( 70 ) and drain (D) ( 76 ) are spaced apart by a channel ( 90 ) underlying a gate ( 84 ) and one or more carrier drift spaces ( 92, 92 ') serially located between the channel ( 90 ) and the source ( 70, 70 ') or drain ( 76, 76 '). A buried region ( 96, 96 ') of the same conductivity type as the drift space ( 92, 92 ') and the source ( 70, 70 ') or drain ( 76, 76 ') is provided below the drift space ( 92, 92 '), separated therefrom in depth by a narrow gap ( 94, 94 ') and ohmically coupled to the source ( 70, 70 ') or drain ( 76, 76 '). Current flow ( 110 ) through the drift space produces a potential difference (Vt) across this gap ( 94, 94 '). As the S-D voltage (Vo) and current ( 109 , Io) increase, this difference (Vt) induces high field conduction between the drift space ( 92, 92 ') and the buried region ( 96, 96 ') and diverts part ( 112 , It) of the S-D current ( 109 , Io) through the buried region ( 96, 96 ') and away from the near surface portions of the drift space ( 92, 92 ') where breakdown generally occurs. Thus, BVdss is increased.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7301187B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7301187B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7301187B23</originalsourceid><addsrcrecordid>eNrjZND2yEzPUCjLzylJTE9VSMtMzUlRSE1LS00uUUhJLctMTlVIzEtRyE0tychP4WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHB5sYGhoYW5k5GxkQoAQDbhSih</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High voltage field effect device and method</title><source>esp@cenet</source><creator>ZITOUNI MOANISS ; LIN XIN ; DEFRESART EDOUARD D ; MORRISON JENNIFER H ; PARRIS PATRICE M ; DESOUZA RICHARD J</creator><creatorcontrib>ZITOUNI MOANISS ; LIN XIN ; DEFRESART EDOUARD D ; MORRISON JENNIFER H ; PARRIS PATRICE M ; DESOUZA RICHARD J</creatorcontrib><description>Methods and apparatus are provided for a MOSFET ( 50, 99, 199 ) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) ( 70 ) and drain (D) ( 76 ) are spaced apart by a channel ( 90 ) underlying a gate ( 84 ) and one or more carrier drift spaces ( 92, 92 ') serially located between the channel ( 90 ) and the source ( 70, 70 ') or drain ( 76, 76 '). A buried region ( 96, 96 ') of the same conductivity type as the drift space ( 92, 92 ') and the source ( 70, 70 ') or drain ( 76, 76 ') is provided below the drift space ( 92, 92 '), separated therefrom in depth by a narrow gap ( 94, 94 ') and ohmically coupled to the source ( 70, 70 ') or drain ( 76, 76 '). Current flow ( 110 ) through the drift space produces a potential difference (Vt) across this gap ( 94, 94 '). As the S-D voltage (Vo) and current ( 109 , Io) increase, this difference (Vt) induces high field conduction between the drift space ( 92, 92 ') and the buried region ( 96, 96 ') and diverts part ( 112 , It) of the S-D current ( 109 , Io) through the buried region ( 96, 96 ') and away from the near surface portions of the drift space ( 92, 92 ') where breakdown generally occurs. Thus, BVdss is increased.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20071127&amp;DB=EPODOC&amp;CC=US&amp;NR=7301187B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20071127&amp;DB=EPODOC&amp;CC=US&amp;NR=7301187B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZITOUNI MOANISS</creatorcontrib><creatorcontrib>LIN XIN</creatorcontrib><creatorcontrib>DEFRESART EDOUARD D</creatorcontrib><creatorcontrib>MORRISON JENNIFER H</creatorcontrib><creatorcontrib>PARRIS PATRICE M</creatorcontrib><creatorcontrib>DESOUZA RICHARD J</creatorcontrib><title>High voltage field effect device and method</title><description>Methods and apparatus are provided for a MOSFET ( 50, 99, 199 ) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) ( 70 ) and drain (D) ( 76 ) are spaced apart by a channel ( 90 ) underlying a gate ( 84 ) and one or more carrier drift spaces ( 92, 92 ') serially located between the channel ( 90 ) and the source ( 70, 70 ') or drain ( 76, 76 '). A buried region ( 96, 96 ') of the same conductivity type as the drift space ( 92, 92 ') and the source ( 70, 70 ') or drain ( 76, 76 ') is provided below the drift space ( 92, 92 '), separated therefrom in depth by a narrow gap ( 94, 94 ') and ohmically coupled to the source ( 70, 70 ') or drain ( 76, 76 '). Current flow ( 110 ) through the drift space produces a potential difference (Vt) across this gap ( 94, 94 '). As the S-D voltage (Vo) and current ( 109 , Io) increase, this difference (Vt) induces high field conduction between the drift space ( 92, 92 ') and the buried region ( 96, 96 ') and diverts part ( 112 , It) of the S-D current ( 109 , Io) through the buried region ( 96, 96 ') and away from the near surface portions of the drift space ( 92, 92 ') where breakdown generally occurs. Thus, BVdss is increased.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND2yEzPUCjLzylJTE9VSMtMzUlRSE1LS00uUUhJLctMTlVIzEtRyE0tychP4WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHB5sYGhoYW5k5GxkQoAQDbhSih</recordid><startdate>20071127</startdate><enddate>20071127</enddate><creator>ZITOUNI MOANISS</creator><creator>LIN XIN</creator><creator>DEFRESART EDOUARD D</creator><creator>MORRISON JENNIFER H</creator><creator>PARRIS PATRICE M</creator><creator>DESOUZA RICHARD J</creator><scope>EVB</scope></search><sort><creationdate>20071127</creationdate><title>High voltage field effect device and method</title><author>ZITOUNI MOANISS ; LIN XIN ; DEFRESART EDOUARD D ; MORRISON JENNIFER H ; PARRIS PATRICE M ; DESOUZA RICHARD J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7301187B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZITOUNI MOANISS</creatorcontrib><creatorcontrib>LIN XIN</creatorcontrib><creatorcontrib>DEFRESART EDOUARD D</creatorcontrib><creatorcontrib>MORRISON JENNIFER H</creatorcontrib><creatorcontrib>PARRIS PATRICE M</creatorcontrib><creatorcontrib>DESOUZA RICHARD J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZITOUNI MOANISS</au><au>LIN XIN</au><au>DEFRESART EDOUARD D</au><au>MORRISON JENNIFER H</au><au>PARRIS PATRICE M</au><au>DESOUZA RICHARD J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High voltage field effect device and method</title><date>2007-11-27</date><risdate>2007</risdate><abstract>Methods and apparatus are provided for a MOSFET ( 50, 99, 199 ) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) ( 70 ) and drain (D) ( 76 ) are spaced apart by a channel ( 90 ) underlying a gate ( 84 ) and one or more carrier drift spaces ( 92, 92 ') serially located between the channel ( 90 ) and the source ( 70, 70 ') or drain ( 76, 76 '). A buried region ( 96, 96 ') of the same conductivity type as the drift space ( 92, 92 ') and the source ( 70, 70 ') or drain ( 76, 76 ') is provided below the drift space ( 92, 92 '), separated therefrom in depth by a narrow gap ( 94, 94 ') and ohmically coupled to the source ( 70, 70 ') or drain ( 76, 76 '). Current flow ( 110 ) through the drift space produces a potential difference (Vt) across this gap ( 94, 94 '). As the S-D voltage (Vo) and current ( 109 , Io) increase, this difference (Vt) induces high field conduction between the drift space ( 92, 92 ') and the buried region ( 96, 96 ') and diverts part ( 112 , It) of the S-D current ( 109 , Io) through the buried region ( 96, 96 ') and away from the near surface portions of the drift space ( 92, 92 ') where breakdown generally occurs. Thus, BVdss is increased.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title High voltage field effect device and method
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