Adhesion by plasma conditioning of semiconductor chip surfaces
A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning...
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creator | COFFMAN PHILLIP R COWENS MARVIN W YAMUNAN VINU MURTUZA MASOOD ODEGARD CHARLES |
description | A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7276401B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7276401B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7276401B23</originalsourceid><addsrcrecordid>eNrjZLBzTMlILc7Mz1NIqlQoyEkszk1USM7PS8ksAYpl5qUr5KcpFKfmZoLESpNL8osUkjMyCxSKS4vSEpNTi3kYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxAVBNXmpJfGiwuZG5mYmBoZORMRFKACE1MKo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Adhesion by plasma conditioning of semiconductor chip surfaces</title><source>esp@cenet</source><creator>COFFMAN PHILLIP R ; COWENS MARVIN W ; YAMUNAN VINU ; MURTUZA MASOOD ; ODEGARD CHARLES</creator><creatorcontrib>COFFMAN PHILLIP R ; COWENS MARVIN W ; YAMUNAN VINU ; MURTUZA MASOOD ; ODEGARD CHARLES</creatorcontrib><description>A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071002&DB=EPODOC&CC=US&NR=7276401B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071002&DB=EPODOC&CC=US&NR=7276401B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>COFFMAN PHILLIP R</creatorcontrib><creatorcontrib>COWENS MARVIN W</creatorcontrib><creatorcontrib>YAMUNAN VINU</creatorcontrib><creatorcontrib>MURTUZA MASOOD</creatorcontrib><creatorcontrib>ODEGARD CHARLES</creatorcontrib><title>Adhesion by plasma conditioning of semiconductor chip surfaces</title><description>A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBzTMlILc7Mz1NIqlQoyEkszk1USM7PS8ksAYpl5qUr5KcpFKfmZoLESpNL8osUkjMyCxSKS4vSEpNTi3kYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxAVBNXmpJfGiwuZG5mYmBoZORMRFKACE1MKo</recordid><startdate>20071002</startdate><enddate>20071002</enddate><creator>COFFMAN PHILLIP R</creator><creator>COWENS MARVIN W</creator><creator>YAMUNAN VINU</creator><creator>MURTUZA MASOOD</creator><creator>ODEGARD CHARLES</creator><scope>EVB</scope></search><sort><creationdate>20071002</creationdate><title>Adhesion by plasma conditioning of semiconductor chip surfaces</title><author>COFFMAN PHILLIP R ; COWENS MARVIN W ; YAMUNAN VINU ; MURTUZA MASOOD ; ODEGARD CHARLES</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7276401B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>COFFMAN PHILLIP R</creatorcontrib><creatorcontrib>COWENS MARVIN W</creatorcontrib><creatorcontrib>YAMUNAN VINU</creatorcontrib><creatorcontrib>MURTUZA MASOOD</creatorcontrib><creatorcontrib>ODEGARD CHARLES</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>COFFMAN PHILLIP R</au><au>COWENS MARVIN W</au><au>YAMUNAN VINU</au><au>MURTUZA MASOOD</au><au>ODEGARD CHARLES</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Adhesion by plasma conditioning of semiconductor chip surfaces</title><date>2007-10-02</date><risdate>2007</risdate><abstract>A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Adhesion by plasma conditioning of semiconductor chip surfaces |
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