Process for forming a thin film of TiSiN, in particular for phase change memory devices

The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing ga...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	ZONCA ROMINA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	ZONCA ROMINA
description	The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH4) and dichlorosilane (SiH2Cl2) at 10-90 sccm-standard cube centimeters per minute-for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H2/N2 plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7253108B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7253108B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7253108B23</originalsourceid><addsrcrecordid>eNrjZAgPKMpPTi0uVkjLLwLh3My8dIVEhZKMzDyFtMycXIX8NIWQzOBMPx0FoEhBYlFJZnJpTiJYrUJBRmJxqkJyRmJeeqpCbmpuflGlQkpqWSbQQB4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEh8abG5kamxoYOFkZEyEEgBfpjio</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Process for forming a thin film of TiSiN, in particular for phase change memory devices</title><source>esp@cenet</source><creator>ZONCA ROMINA</creator><creatorcontrib>ZONCA ROMINA</creatorcontrib><description>The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH4) and dichlorosilane (SiH2Cl2) at 10-90 sccm-standard cube centimeters per minute-for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H2/N2 plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070807&DB=EPODOC&CC=US&NR=7253108B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070807&DB=EPODOC&CC=US&NR=7253108B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZONCA ROMINA</creatorcontrib><title>Process for forming a thin film of TiSiN, in particular for phase change memory devices</title><description>The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH4) and dichlorosilane (SiH2Cl2) at 10-90 sccm-standard cube centimeters per minute-for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H2/N2 plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgPKMpPTi0uVkjLLwLh3My8dIVEhZKMzDyFtMycXIX8NIWQzOBMPx0FoEhBYlFJZnJpTiJYrUJBRmJxqkJyRmJeeqpCbmpuflGlQkpqWSbQQB4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEh8abG5kamxoYOFkZEyEEgBfpjio</recordid><startdate>20070807</startdate><enddate>20070807</enddate><creator>ZONCA ROMINA</creator><scope>EVB</scope></search><sort><creationdate>20070807</creationdate><title>Process for forming a thin film of TiSiN, in particular for phase change memory devices</title><author>ZONCA ROMINA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7253108B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZONCA ROMINA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZONCA ROMINA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process for forming a thin film of TiSiN, in particular for phase change memory devices</title><date>2007-08-07</date><risdate>2007</risdate><abstract>The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH4) and dichlorosilane (SiH2Cl2) at 10-90 sccm-standard cube centimeters per minute-for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H2/N2 plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US7253108B2
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Process for forming a thin film of TiSiN, in particular for phase change memory devices
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T09%3A52%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZONCA%20ROMINA&rft.date=2007-08-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7253108B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true