Selective etching of organosilicate films over silicon oxide stop etch layers

Selective etching of organosilicate films over silicon oxide stop etch layers

A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate la...

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Hauptverfasser: NGUYEN HUONG THANH, BARNES MICHAEL SCOTT, XIA LI-QUN, NAIK MEHUL
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator NGUYEN HUONG THANH
BARNES MICHAEL SCOTT
XIA LI-QUN
NAIK MEHUL
description A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Selective etching of organosilicate films over silicon oxide stop etch layers
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