Dram memory cell with a trench capacitor and method for production thereof

A memory cell includes a selection transistor and a trench capacitor. The trench capacitor is filled with a conductive trench filling on which an insulating covering layer is arranged. The insulating covering layer is laterally overgrown, proceeding from the substrate with a selectively grown epitax...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WICH-GLASEN ANDREAS, RICHTER FRANK, TEMMLER DIETMAR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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