Line selected F2 two chamber laser system

An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producin...

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Hauptverfasser: FOMENKOV IGOR V, ERSHOV ALEXANDER I, PARTLO WILLIAM N, ONKELS ECKEHARD D, UJAZDOWSKI RICHARD C, SMITH SCOT T, HULBURD WILLIAM G, KNOWLES DAVID S, BROWN DANIEL J. W, NESS RICHARD M, MYERS DAVID W, SANDSTROM RICHARD L, RYLOV GERMAN E, BESAUCELE HERVE A
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creator FOMENKOV IGOR V
ERSHOV ALEXANDER I
PARTLO WILLIAM N
ONKELS ECKEHARD D
UJAZDOWSKI RICHARD C
SMITH SCOT T
HULBURD WILLIAM G
KNOWLES DAVID S
BROWN DANIEL J. W
NESS RICHARD M
MYERS DAVID W
SANDSTROM RICHARD L
RYLOV GERMAN E
BESAUCELE HERVE A
description An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
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A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. 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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
COLORIMETRY
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
title Line selected F2 two chamber laser system
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