Method and structure for controlling floating body effects

A method for forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate adjacent the gate. A facet is formed in at...

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Bibliographische Detailangaben
Hauptverfasser: EN WILLIAM GEORGE, YEH PINGIN, PELELLA MARIO M
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method for forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate adjacent the gate. A facet is formed in at least one of the source/drain junctions of the integrated circuit.