MRAM-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference

An MRAM memory is proposed which gives a maximum read-out signal. This is advantageous for high-speed sensing of the MRAM bits. In an MRAM memory with magnetoresistive memory cells linked together to form logically organized rows and columns, It is obtained by, at least during writing, connecting wr...

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Bibliographische Detailangaben

Hauptverfasser:	CUPPENS ROGER, DITEWIG ANTHONIE MEINDERT HERMAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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