Nitride semiconductor thin film having fewer defects and method of growing the same

Nitride semiconductor thin film having fewer defects and method of growing the same

The present invention relates to a nitride semiconductor thin film having less defects and a method of growing the same. According to the present invention, the nitride semiconductor thin film with lower defect density can be manufactured by forming grooves on a substrate, sequentially forming a buf...

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1. Verfasser: SHIN JOHNGEON
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHIN JOHNGEON
description The present invention relates to a nitride semiconductor thin film having less defects and a method of growing the same. According to the present invention, the nitride semiconductor thin film with lower defect density can be manufactured by forming grooves on a substrate, sequentially forming a buffer layer and a first nitride semiconductor thin film on a whole surface of the substrate, etching higher defect density regions of the first nitride semiconductor thin film, and then laterally growing a second nitride semiconductor thin film. Thus, a highly crystalline nitride semiconductor thin film can be obtained. Therefore, there are advantages in that high-efficiency, high-power and high-reliability optical devices or electronic devices can be manufactured and high throughput can also be obtained by using the obtained nitride semiconductor thin film.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Nitride semiconductor thin film having fewer defects and method of growing the same
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