Method for reducing foreign material concentrations in etch chambers

A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction product...

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Hauptverfasser:	COONEY, III EDWARD CRANDAL, STAMPER ANTHONY KENDALL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	COONEY, III EDWARD CRANDAL STAMPER ANTHONY KENDALL
description	A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction products that partially adhere to the inner chamber walls. A species is introduced into the etch chamber that increases the adhesion of the first layer of reaction products to the inner chamber walls.
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title	Method for reducing foreign material concentrations in etch chambers
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