GaN LED with solderable backside metal

GaN LED with solderable backside metal

A light-emitting element ( 24 ) is disclosed. A light emitting diode (LED) includes a sapphire substrate ( 26 ) having front and back sides ( 33, 35 ), and a plurality of semiconductor layers ( 28, 30, 32 ) deposited on the front side ( 33 ) of the sapphire substrate ( 26 ). The semiconductor layers...

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Hauptverfasser: GIBB SHAWN R, MUKERJI PROSANTO K, ELIASHEVICH IVAN, KARLICEK ROBERT F, VENUGOPALAN HARI S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator GIBB SHAWN R
MUKERJI PROSANTO K
ELIASHEVICH IVAN
KARLICEK ROBERT F
VENUGOPALAN HARI S
description A light-emitting element ( 24 ) is disclosed. A light emitting diode (LED) includes a sapphire substrate ( 26 ) having front and back sides ( 33, 35 ), and a plurality of semiconductor layers ( 28, 30, 32 ) deposited on the front side ( 33 ) of the sapphire substrate ( 26 ). The semiconductor layers ( 28, 30, 32 ) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack ( 40 ) includes an adhesion layer ( 34 ) deposited on the back side ( 35 ) of the sapphire substrate ( 26 ), and a solderable layer ( 38 ) connected to the adhesion layer ( 34 ) such that the solderable layer ( 38 ) is secured to the sapphire substrate ( 26 ) by the adhesion layer ( 34 ). A support structure ( 42 ) is provided on which the LED is disposed. A solder bond ( 44 ) is arranged between the LED and the support structure ( 42 ). The solder bond ( 44 ) secures the LED to the support structure ( 42 ).
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A light emitting diode (LED) includes a sapphire substrate ( 26 ) having front and back sides ( 33, 35 ), and a plurality of semiconductor layers ( 28, 30, 32 ) deposited on the front side ( 33 ) of the sapphire substrate ( 26 ). The semiconductor layers ( 28, 30, 32 ) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack ( 40 ) includes an adhesion layer ( 34 ) deposited on the back side ( 35 ) of the sapphire substrate ( 26 ), and a solderable layer ( 38 ) connected to the adhesion layer ( 34 ) such that the solderable layer ( 38 ) is secured to the sapphire substrate ( 26 ) by the adhesion layer ( 34 ). A support structure ( 42 ) is provided on which the LED is disposed. A solder bond ( 44 ) is arranged between the LED and the support structure ( 42 ). 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title GaN LED with solderable backside metal
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