Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications

A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium sourc...

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Hauptverfasser:	NEMANI SRINIVAS D, COX MICHAEL S, GEOFFRION BRUNO, KRISHNARAJ PADMANABHAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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