Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications
A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium sourc...
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| creator | NEMANI SRINIVAS D COX MICHAEL S GEOFFRION BRUNO KRISHNARAJ PADMANABHAN |
| description | A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications |
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