Method of manufacturing a semiconductor device having a multi-layered wiring structure

An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in con...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SATO KAZUHIKO, SAHARA MASASHI, UCHIKOSHI KEN, TACHIGAMI ATSUSHI, HOTTA KATSUHIKO, SUWANAI NAOKATSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!