Semiconductor memory device having a gate electrode and a method of manufacturing thereof

A first aspect of the present invention is providing a non-volatile semiconductor memory device, comprising: a memory cell having a tunnel oxide layer formed on a semiconductor substrate, a floating gate formed on the tunnel oxide layer, a control gate to which voltage is supplied, a source diffusio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HIMENO YOSHIAKI, SHIBA KATSUYASU, TSUNODA HIROAKI, KOBAYASHI HIDEYUKI, FUKUHARA JOTA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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