Semiconductor memory device performing auto refresh in the self refresh mode
Method and apparatus for use with multi-bank Synchronous Dynamic Random Access Memory (SDRAM) circuits, modules, and memory systems are disclosed. In one described embodiment, an SDRAM circuit receives a bank address to be used in an auto-refresh operation, and performs the auto-refresh operation on...
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creator | LEE YUN-SANG PARK TAEK-SEON LEE JUNG-BAE |
description | Method and apparatus for use with multi-bank Synchronous Dynamic Random Access Memory (SDRAM) circuits, modules, and memory systems are disclosed. In one described embodiment, an SDRAM circuit receives a bank address to be used in an auto-refresh operation, and performs the auto-refresh operation on the specified bank and for a current refresh row. The device is allowed to enter a self-refresh mode before auto-refresh operations have been completed for all banks and the current refresh row. The memory device completes refresh operations for the current refresh row before proceeding to perform self-refresh operations for new rows. Other embodiments are described and claimed. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7164615B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7164615B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7164615B23</originalsourceid><addsrcrecordid>eNqNyrsKAjEQRuE0FqK-w7yAxXpZe0WxsFutl5D8cQM7mTDJCr69jVhbHfg4c3PrwNFJ8pOrosRg0Td5vKIDZWgQ5ZieZKcqpAiKMlBMVAdQwRh-xuKxNLNgx4LVtwtDl_P9dF0jS4-SrUNC7R_doWl3bbM_brZ_LB9uGDXg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor memory device performing auto refresh in the self refresh mode</title><source>esp@cenet</source><creator>LEE YUN-SANG ; PARK TAEK-SEON ; LEE JUNG-BAE</creator><creatorcontrib>LEE YUN-SANG ; PARK TAEK-SEON ; LEE JUNG-BAE</creatorcontrib><description>Method and apparatus for use with multi-bank Synchronous Dynamic Random Access Memory (SDRAM) circuits, modules, and memory systems are disclosed. In one described embodiment, an SDRAM circuit receives a bank address to be used in an auto-refresh operation, and performs the auto-refresh operation on the specified bank and for a current refresh row. The device is allowed to enter a self-refresh mode before auto-refresh operations have been completed for all banks and the current refresh row. The memory device completes refresh operations for the current refresh row before proceeding to perform self-refresh operations for new rows. Other embodiments are described and claimed.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070116&DB=EPODOC&CC=US&NR=7164615B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070116&DB=EPODOC&CC=US&NR=7164615B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE YUN-SANG</creatorcontrib><creatorcontrib>PARK TAEK-SEON</creatorcontrib><creatorcontrib>LEE JUNG-BAE</creatorcontrib><title>Semiconductor memory device performing auto refresh in the self refresh mode</title><description>Method and apparatus for use with multi-bank Synchronous Dynamic Random Access Memory (SDRAM) circuits, modules, and memory systems are disclosed. In one described embodiment, an SDRAM circuit receives a bank address to be used in an auto-refresh operation, and performs the auto-refresh operation on the specified bank and for a current refresh row. The device is allowed to enter a self-refresh mode before auto-refresh operations have been completed for all banks and the current refresh row. The memory device completes refresh operations for the current refresh row before proceeding to perform self-refresh operations for new rows. Other embodiments are described and claimed.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrsKAjEQRuE0FqK-w7yAxXpZe0WxsFutl5D8cQM7mTDJCr69jVhbHfg4c3PrwNFJ8pOrosRg0Td5vKIDZWgQ5ZieZKcqpAiKMlBMVAdQwRh-xuKxNLNgx4LVtwtDl_P9dF0jS4-SrUNC7R_doWl3bbM_brZ_LB9uGDXg</recordid><startdate>20070116</startdate><enddate>20070116</enddate><creator>LEE YUN-SANG</creator><creator>PARK TAEK-SEON</creator><creator>LEE JUNG-BAE</creator><scope>EVB</scope></search><sort><creationdate>20070116</creationdate><title>Semiconductor memory device performing auto refresh in the self refresh mode</title><author>LEE YUN-SANG ; PARK TAEK-SEON ; LEE JUNG-BAE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7164615B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE YUN-SANG</creatorcontrib><creatorcontrib>PARK TAEK-SEON</creatorcontrib><creatorcontrib>LEE JUNG-BAE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE YUN-SANG</au><au>PARK TAEK-SEON</au><au>LEE JUNG-BAE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor memory device performing auto refresh in the self refresh mode</title><date>2007-01-16</date><risdate>2007</risdate><abstract>Method and apparatus for use with multi-bank Synchronous Dynamic Random Access Memory (SDRAM) circuits, modules, and memory systems are disclosed. In one described embodiment, an SDRAM circuit receives a bank address to be used in an auto-refresh operation, and performs the auto-refresh operation on the specified bank and for a current refresh row. The device is allowed to enter a self-refresh mode before auto-refresh operations have been completed for all banks and the current refresh row. The memory device completes refresh operations for the current refresh row before proceeding to perform self-refresh operations for new rows. Other embodiments are described and claimed.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | Semiconductor memory device performing auto refresh in the self refresh mode |
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